Next-generation memory devices will be powered by protons
The development of ultralow-power, high-capacity computers chips is based on a proton-driven method that allows multiple ferroelectric phases transitions.
An international team led by KAUST has discovered that a proton-mediated method for producing multiple phase transitions within ferroelectric materials can help to develop high-performance memories, including brain-inspired or neuromorphic computing chips. The paper was published in Science Advances.
Ferroelectrics such as indium selenide are intrinsically-polarized materials, and they switch polarity if placed in an electrical field. This makes them ideal for memory technology. The resulting memory devices are not only low-voltage, but also have excellent read/write endurance, write speed, and maximum storage capacity. Xin He says that this is because the existing methods are only able to trigger a handful of ferroelectric phases and capturing them is an experimental challenge.
Source:
https://phys.org/news/2023-07-protons-power-next-generation-memory-devices.html
